AON2801 - Dual P-Channel MOSFET

Product Overview

Alpha & Omega Semiconductors

Part number	AON2801
Manufacturer	Alpha & Omega Semiconductors
File Size	297.64 KB
Description	Dual P-Channel MOSFET
Datasheet	AON2801 Datasheet
Additional preview pages of the AON2801 datasheet.

The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 D1 D2 D1 G2 S2 Top Bottom Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C CurrentA TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PDSM TJ, TSTG G1 G2 S1 S2 Maximum -20 ±8 -3 -2.3 -15 1.5 0.95 -55 to 150 Units V V A W.

📁 Similar Datasheet

Other Datasheets by Alpha & Omega Semiconductors

Published: Jan 12, 2014 |