Datasheet Details
| Part number | AON2810 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 247.08 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON2810 Download (PDF) |
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Overview: AON2810 30V Dual N-Channel AlphaMOS General.
| Part number | AON2810 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 247.08 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON2810 Download (PDF) |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application • DC/DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection 30V 2A < 44 mΩ < 52 mΩ < 74 mΩ HBM Class 3A Top View DFN 2x2A Bottom View D1 S2 G2 D1 Pin 1 D2 S1 G1 D2 Pin 1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current G TA=70°C Pulsed Drain Current C ID IDM VDS Spike 100ns VSPIKE TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 2 1.6 8 36 2.5 1.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ 40 65 Max 50 80 D2 S2 Units V V A V W °C Units °C/W °C/W Rev.1.0: August 2013 www.aosmd.com Page 1 of 5 AON2810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±10V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 0.6 1 1.4 V VGS=10V, ID=2A 36 44 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1A TJ=125°C 50 61 mΩ 41 52 VGS=2.5V, ID=1A 56 74 gFS Forward Transconductance VDS=5V, ID=2A 9.5 S VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG 0.75 1 2 V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 235 pF 75 pF 15 pF 4 8 12 Ω SWITCHING PARAMETERS Qg(10
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