Datasheet Details
| Part number | AON2812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 239.53 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON2812 Download (PDF) |
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Overview: AON2812 30V Dual N-Channel AlphaMOS General.
| Part number | AON2812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 239.53 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON2812 Download (PDF) |
|
|
|
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging • Load switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection 30V 4.5A < 37mΩ < 45mΩ < 70mΩ HBM Class 3A Top View DFN 2x2 Bottom View D1 G2 S2 D1 Pin 1 D2 S1 G1 D2 Pin 1 Orderable Part Number AON2812 Package Type DFN 2x2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current G TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ 40 65 D 1 D2 G1 G2 S1 S2 Form Tape & Reel Minimum Order Quantity 3000 Maximum 30 ±12 4.5 3.5 18 2.5 1.6 -55 to 150 Units V V A W °C Max Units 50 °C/W 80 °C/W Rev.1.0: February 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±10V VDS=VGS, ID=250µA VGS=10V, ID=2A Static Drain-Source On-Resistance VGS=4.5V, ID=1A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=2A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr
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