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AON2802 - 30V Dual N-Channel MOSFET

Description

The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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AON2802 30V Dual N-Channel MOSFET General Description The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection 30V 2A < 60mΩ < 68mΩ < 88mΩ HBM Class 3A DFN 2x2A Top View Bottom View D1 G2 S2 D1 D2 D2 Pin 1 G1 S1 Pin 1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation B C Maximum 30 ±12 2 1.6 8 2.1 1.
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