Datasheet Details
| Part number | AON6590 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 216.29 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6590 Download (PDF) |
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Overview: AON6590 40V N-Channel MOSFET General.
| Part number | AON6590 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 216.29 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6590 Download (PDF) |
|
|
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 100A < 0.99mΩ < 1.5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 PIN1 Orderable Part Number AON6590 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 1 8 2 7 3 6 4 5 Form Tape & Reel D G S Minimum Order Quantity 3000 Maximum 40 ±20 100 100 400 67 54 65 634 48 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ V W W °C Typ Max 14 17 40 50 0.45 0.6 Units °C/W °C/W °C/W Rev.3.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode For
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