Datasheet Details
| Part number | AON6594 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 354.41 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6594 Download (PDF) |
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Overview: AON6594 30V N-Channel AlphaMOS General.
| Part number | AON6594 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 354.41 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6594 Download (PDF) |
|
|
|
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 35A < 7mΩ < 11mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S Orderable Part Number AON6594 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike Power Dissipation B 100ns TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 35 27 130 22 17 32* 26* 36 39 15.5 5 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 20 45 Maximum Junction-to-Case Steady-State RθJC 2.6 *L=0.1mH, IAS=23A, EAS=26mJ, Starting TJ=25°C.
Max 25 55 3.2 Units °C/W °C/W °C/W Rev.1.0: April 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=
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