Datasheet Details
| Part number | AON6590A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 355.21 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6590A Download (PDF) |
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Overview: AON6590A 40V N-Channel MOSFET General.
| Part number | AON6590A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 355.21 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6590A Download (PDF) |
|
|
|
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 300A < 0.99mΩ < 1.5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View Top View PIN1 S1 S2 S3 G4 8D 7D 6D 5D PIN1 Orderable Part Number AON6590A Package Type DFN 5x6 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS VDS Spike 10μs VSPIKE Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 300 225 900 67 54 65 634 48 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.45 Max 17 50 0.6 Units °C/W °C/W °C/W Rev.2.1: September 2023 www.aosmd.com Page 1 of 6 AON6590A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD
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