Datasheet Details
| Part number | AON6774 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 301.35 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6774-AlphaOmegaSemiconductors.pdf |
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Overview: AON6774 30V N-Channel AlphaMOS General.
| Part number | AON6774 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 301.35 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6774-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 85A < 2.05mΩ < 3.15mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Orderable Part Number AON6774 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.05mH C ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 66 260 44 35 56 78 36 48 19 6.2 4 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 2 Max 20 50 2.6 Units °C/W °C/W °C/W Rev.1.0: October 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=10mA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance V
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