Datasheet Details
| Part number | AON7414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 711.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AON7414 Datasheet
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| Part number | AON7414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 711.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AON7414 Datasheet
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Product Summary The AON7414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 20A < 15mΩ < 20mΩ DFN 3x3A Top View Bottom View Top View Pin 1 Pin 1 1 8 2 7 3 6 4 5 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C G TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 20 15 55 12.5 10 17 14 36 15.5 6 4.1 2.6 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 24 47 Maximum Junction-to-Case Steady-State RθJC 6.6 Max 30 60 8 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: September 2013 www.aosmd.com Page 1 of 6 AON7414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C 12.3 15 mΩ 19.5 24 VGS=4.5V, ID=7A 15.8 20 mΩ gFS Forward Transconductance VDS=5V, ID=8A 33 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V IS Maximum Body-Diode Continuous Current 18 A
AON7414 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON7410 | 30V N-Channel MOSFET |
| AON7412 | 30V N-Channel MOSFET |
| AON7416 | 30V N-Channel MOSFET |
| AON7418 | 30V N-Channel MOSFET |
| AON7400 | Field Effect Transistor |
| AON7400A | 30V N-Channel MOSFET |
| AON7401 | 30V P-Channel MOSFET |
| AON7402 | 30V N-Channel MOSFET |
| AON7403 | 30V P-Channel MOSFET |
| AON7404 | 20V N-Channel MOSFET |