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AON7430 - 30V N-Channel MOSFET

Datasheet Summary

Description

The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Features

  • VDS (V) = 30V ID = 34A RDS(ON) < 12mW RDS(ON) < 16mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom Pin 1 Top View S1 8D S2 7D S3 6D G G4 5D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current A TA=70°C IDSM Avalanche Current C IAR Repetitiv.

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Datasheet Details

Part number AON7430
Manufacturer Alpha & Omega Semiconductors
File Size 453.90 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet AON7430 Datasheet
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Full PDF Text Transcription

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AON7430 30V N-Channel MOSFET General Description The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 34A RDS(ON) < 12mW RDS(ON) < 16mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom Pin 1 Top View S1 8D S2 7D S3 6D G G4 5D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current A TA=70°C IDSM Avalanche Current C IAR Repetitive avalanche energy L=0.
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