Datasheet Details
| Part number | AON7752 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 279.83 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7752-AlphaOmegaSemiconductors.pdf |
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Overview: AON7752 30V N-Channel AlphaMOS General.
| Part number | AON7752 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 279.83 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7752-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 16A < 8.2mΩ < 14.5mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 1 8 2 7 3 6 4 5 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 16 12 64 15 12 22 12 36 20 8.3 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 30 60 Maximum Junction-to-Case Steady-State RθJC 5 Max 40 75 6 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 0 : April 2012 www.aosmd.com Page 1 of 6 AON7752 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.5 VGS=10V, ID=16A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=16A VSD
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