Datasheet4U Logo Datasheet4U.com

AON7200 - 30V N-Channel MOSFET

General Description

The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AON7202 N-Channel 30V MOSFET VBsemi
AON7405 P-Channel 30V MOSFET VBsemi
AON7446 N-Channel MOSFET VBsemi
AON7502 N-Channel 30V MOSFET VBsemi
AON7702A N-Channel 30V MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AON7202 30V N-Channel MOSFET
AON7210 30V N-Channel MOSFET
AON7220 25V N-Channel MOSFET
AON7230 N-Channel MOSFET
AON7240 40V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AON7200 30V N-Channel MOSFET General Description The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 40A < 8mΩ < 11mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy L=0.