Datasheet Details
| Part number | AON7220 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 385.19 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AON7220-AlphaOmegaSemiconductors.pdf |
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Overview: AON7220 25V N-Channel MOSFET General.
| Part number | AON7220 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 385.19 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AON7220-AlphaOmegaSemiconductors.pdf |
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The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 25V 50A < 3mΩ < 4mΩ DFN 3.3x3.3 Top View Bottom View Top View 18 27 36 4 5G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±12 50 39 311 37 30 48 115 83 33 6.2 4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: March 2011 www.aosmd.com Page 1 of 6 AON7220 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 25 V IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 1.3 1.8 V ID(ON) On state drain current VGS=10V, VDS=5V 311 A VGS=10V, ID=20A 2.5 3 RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.5 4.2 mΩ VGS=4.5V, ID=18A 3.2 4 gFS Forward Transconductance V
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