Datasheet Details
| Part number | AON7264C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 768.91 KB |
| Description | 60V N-Channel MOSFET |
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AON7264C Download (PDF)
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| Part number | AON7264C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 768.91 KB |
| Description | 60V N-Channel MOSFET |
| Download |
AON7264C Download (PDF)
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • ESD Protected • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 24A < 13.2mΩ < 17.7mΩ HBM Class 2 DFN 3x3 EP D Top View Bottom View Top View Pin 1 Pin 1 S1 S2 S3 G4 8D 7D 6D G 5D S Orderable Part Number AON7264C Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH C VDS Spike I Power Dissipation B 10μs TC=25°C TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 24 20 90 13 10 14 29 72 24 9.5 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 24 45 Maximum Junction-to-Case Steady-State RqJC 4.2 Max 30 55 5.2 Units °C/W °C/W °C/W Rev.1.0: September 2021 www.aosmd.com Page 1 of 6 AON7264C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 VGS=10V, ID=13A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=11A gFS Forward Transconduc
AON7264C 60V N-Channel AlphaSGT TM General.
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