Datasheet Details
| Part number | AON7246 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 268.50 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AON7246-AlphaOmegaSemiconductors.pdf |
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Overview: AON7246 60V N-Channel MOSFET General.
| Part number | AON7246 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 268.50 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AON7246-AlphaOmegaSemiconductors.pdf |
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The AON7246 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 100% UIS Tested 100% Rg Tested 60V 34.5A < 15mΩ < 19mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Maximum 60 ±20 34.5 22 95 10 8 20 20 34.7 13.9 3.1 2 -55 to 150 Typ Max 30 40 60 75 3 3.6 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: Sep.
2011 www.aosmd.com Page 1 of 6 AON7246 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 2 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 95 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A TJ=125°C 12 15 mΩ 20.5 26 VGS=4.5V, ID=9A 15 19 mΩ gFS Forward Transconductance VDS=5V, ID=10A 75 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
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