Datasheet Details
| Part number | AON7254 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.59 KB |
| Description | 150V N-CHANNEL MOSFET |
| Download |
AON7254 Download (PDF)
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| Part number | AON7254 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.59 KB |
| Description | 150V N-CHANNEL MOSFET |
| Download |
AON7254 Download (PDF)
|
|
|
|
• Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 150V 17A < 54mΩ < 66mΩ Application • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View Pin 1 Pin 1 Top View 18 27 36 45 G D S Orderable Part Number AON7254 Package Type DFN 3.3x3.3 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 17 11 30 5.5 4.5 15 34 180 39 15.5 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State RθJA Steady-State RθJC Typ 25 50 2.6 Max 30 60 3.2 Units °C/W °C/W °C/W Rev.1.0: October 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=150V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=5A VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V
AON7254 150V N-Channel AlphaMOS General.
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