Datasheet Details
| Part number | AON7244 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 273.32 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AON7244-AlphaOmegaSemiconductors.pdf |
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Overview: AON7244 60V N-Channel MOSFET General.
| Part number | AON7244 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 273.32 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AON7244-AlphaOmegaSemiconductors.pdf |
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The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 50A < 8.5mΩ < 12mΩ DFN 3.3x3.3 EP Top View Bottom View Top View Pin 1 18 27 36 4 5G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 50 39 160 20 16 40 80 83 33 6.2 4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: July 2011 www.aosmd.com Page 1 of 6 AON7244 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 2 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 160 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 7 8.5 mΩ 12 15 VGS=4.5V, ID=16A 9 12 mΩ gFS Forward Transconductance VDS=5V, ID=20A 100 S VSD Diode Forward Voltage IS=1A,VGS
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