Datasheet Details
| Part number | AON7140 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 730.08 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AON7140-AlphaOmegaSemiconductors.pdf |
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Overview: AON7140 40V N-Channel MOSFET General.
| Part number | AON7140 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 730.08 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AON7140-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 148A < 2.3mΩ < 3.5mΩ Applications • Synchronous Rectification for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring switches 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View Pin 1 Pin 1 Orderable Part Number AON7140 Package Type DFN 3.3x3.3 D Top View S1 S2 S3 G4 8D 7D 6D 5D G S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 148 93 550 31.5 25.5 30 135 48 89 35 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 25 50 Maximum Junction-to-Case Steady-State RqJC -- Max 30 60 1.4 Units °C/W °C/W °C/W Rev.2.0: May 2020 www.aosmd.com Page 1 of 6 AON7140 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Cu
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