Datasheet Details
| Part number | AON7754 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 354.45 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7754-AlphaOmegaSemiconductors.pdf |
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Overview: AON7754 30V N-Channel AlphaMOS General.
| Part number | AON7754 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 354.45 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7754-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 32A < 3.6mΩ < 5mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 1 8 2 7 3 6 4 5 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 25 128 24 19 50 63 36 70 28 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 30 60 Maximum Junction-to-Case Steady-State RθJC 1.3 Max 40 75 1.8 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev0 : Jun 2012 www.aosmd.com Page 1 of 6 AON7754 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD D
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