Datasheet Details
| Part number | AONE36132 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 436.86 KB |
| Description | 25V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONE36132-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AONE36132 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 436.86 KB |
| Description | 25V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONE36132-AlphaOmegaSemiconductors.pdf |
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• Bottom Source Technology • Very Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in PC, Servers • Point of load Converters DFN3.3x3.3A Top View Bottom View AONE36132 25V Dual Asymmetric N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 25V 25V 17A 34A < 4.6mΩ < 1.4mΩ < 6mΩ < 1.7mΩ 100% UIS Tested 100% Rg Tested Top View Transparent View Pin 1 Orderable Part Number AONE36132 Package Type DFN3.3x3.3A Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 25 25 Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD ±12 60G 38 160 17 13.5 48 12 25 10 ±12 60G 60G 200 34 27 60 18 35.5 14 TA=25°C Power Dissipation A TA=70°C PDSM 2 1.3 2.5 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 50 40 60 50 75 65 90 80 4 2.5 5 3.5 Units °C/W °C/W °C/W Rev.1.0: October 2017 www.aosmd.com Page 1 of 8 AONE36132 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=25V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=10V, ID=17A Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=17A Diode Forward Voltage IS=1A
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