Datasheet Details
| Part number | AONH36334 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 729.58 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONH36334 Download (PDF) |
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| Part number | AONH36334 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 729.58 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONH36334 Download (PDF) |
|
|
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• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Q1 30V 16A <10.2mW <15.8mW Q2 30V 18A <7.7mW <11.6mW 100% UIS Tested 100% Rg Tested Power DFN3x3A Top View Bottom View G2 S2 S2 S2 (S1/D2) D1 Top View Bottom View D1 G1 D1 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current G TC=25°C TC=100°C ID 16 12 18 14 Pulsed Drain Current C IDM 64 72 Continuous Drain Current TA=25°C TA=70°C 13 IDSM 7.8 15 9 Avalanche Current C IAS 32 32 Avalanche Energy L=0.01mH C EAS 5 5 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 23 9 25 10 TA=25°C Power Dissipation A TA=70°C 2.5 PDSM 0.9 2.5 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 40 70 4.5 Max Q1 50 90 5.4 Typ Q2 40 70 4.2 Max Q2 50 90 5 Units °C/W °C/W °C/W Rev.3.2 : October 2023 www.aosmd.com Page 1 of 10 AONH36334 0 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.2 V RDS(ON) Static Drain-Source On-
AONH36334 30V Dual Asymmetric N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |
| AON1634 | N-Channel MOSFET |
| AON2240 | 40V N-Channel MOSFET |
| AON2260 | 60V N-Channel MOSFET |
| AON2290 | 100V N-Channel MOSFET |
| AON2392 | 100V N-CHANNEL MOSFET |