Datasheet Details
| Part number | AONK40202 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 524.09 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AONK40202-AlphaOmegaSemiconductors.pdf |
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Overview: AONK40202 25V N-Channel MOSFET General.
| Part number | AONK40202 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 524.09 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AONK40202-AlphaOmegaSemiconductors.pdf |
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• AlphaSGTTM N-Channel Power MOSFET technology • Source down package with center gate • Low RDS(ON) • Logic level • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • Synchronous Rectification • DC-DC low side FET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 25V 360A < 0.69mΩ < 0.85mΩ Top View DFN 3.3x3.3B Bottom View PIN 1 Orderable Part Number AONK40202 PIN 1 Package Type DFN3.3x3.3B Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC G S1 9 S2 S3 S4 Form Tape & Reel D 8D 7D 6D 5D G S Minimum Order Quantity 3000 Maximum 25 ±12 360 256 730 75 63 60 18 136 68 6 4.2 -55 to 175 Units V V A A A mJ W W °C Typ Max Units 20 25 °C/W 35 45 °C/W 1.1 °C/W Rev 2.0: July 2025 www.aosmd.com Page 1 of 6 AONK40202 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 25 IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltag
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