Datasheet4U Logo Datasheet4U.com

AONL32328 Datasheet 30V Complementary MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AONL32328 30V Complementary MOSFET General.

General Description

• Pch+Nch Complementary MOSFET • Trench Power MOSFET • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen Free Compliant Product Summary P-channel(Q1/Q3) VDS (V) = -30V ID = -7A RDS(ON) < 27mΩ RDS(ON) < 45mΩ N-channel(Q2/Q4) VDS (V) = 30V ID = 8A RDS(ON) < 21mΩ RDS(ON) < 32mΩ (VGS = ±10V) (VGS = ±10V) (VGS = ±4.5V) Applications • Motor Drive • DC-FAN 100% UIS Tested 100% Rg Tested Top View Pin 1 DFN4x3A_12L Bottom View N-G4 P-G3 N-D4/P-D3 P-S1/S3 N-D2/P-D1 P-G1 N-S2/S4 N-G2 Pin 1 P-G1 P-S1/S3 P-G3 Orderable Part Number AONL32328 Package Type DFN 4x3A Bottom View N-D2/P-D1 Pin 1 N-G2 N-S2/S4 N-D4/P-D3 N-G4 Form Tape & Reel P-G1 N-D2/P-D1 N-G2 P-S1/S3 Q1 Q3 Q2 Q4 P-G3 N-D4/P-D3 N-G4 N-S2/S4 Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max P-Channel Q1/Q3 Max N-Channel Q2/Q4 Drain-Source Voltage VDS -30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA=25°C TA=70°C ID -7 -6 8 7 Pulsed Drain Current C IDM -28 32 Avalanche Current C IAS -18 12 Avalanche energy L=0.1mH C EAS 16 7 TA=25°C Power Dissipation B TA=70°C PD 2.6 1.6 2.6 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ Q1/Q3 48 75 Typ Q2/Q4 Max Q1/Q3 Max Q2/Q4 48 60 60 75 90 90 Units °C/W °C/W Rev.1.0: February 2019 www.aosmd.com Page 1 of 9

AONL32328 Distributor & Price

Compare AONL32328 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.