Datasheet Details
| Part number | AONS34306C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.61 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS34306C-AlphaOmegaSemiconductors.pdf |
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Overview: AONS34306C 30V N-Channel MOSFET General.
| Part number | AONS34306C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.61 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS34306C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 370A < 0.95mΩ < 1.4mΩ DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS34306C PIN1 S1 S2 S3 G4 Package Type DFN5X6 8D 7D 6D 5D G S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 370 230 1480 71 57 50 125 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.46 Max 17 55 0.6 Units °C/W °C/W °C/W Rev.2.2: August 2025 www.aosmd.com Page 1 of 6 AONS34306C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current
| Part Number | Description |
|---|---|
| AONS34304C | 30V N-Channel MOSFET |
| AONS30300 | 30V N-Channel MOSFET |
| AONS30302 | 30V N-Channel Transistor |
| AONS32100 | 25V N-Channel MOSFET |
| AONS32106 | 20V N-Channel MOSFET |
| AONS32302 | 30V N-Channel MOSFET |
| AONS32303 | 30V N-Channel MOSFET |
| AONS32304 | 30V N-Channel MOSFET |
| AONS32306 | N-Channel MOSFET |
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