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AONS34306C - 30V N-Channel MOSFET

General Description

Trench Power MOSFET technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Applications High performance ORing, Efuse Ultra high current battery charge/discharge Product Summary VDS ID (at

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AONS34306C 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 370A < 0.95mΩ < 1.