Datasheet Details
| Part number | AONS38108 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 425.09 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AONS38108-AlphaOmegaSemiconductors.pdf |
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Overview: AONS38108 25V N-Channel MOSFET General.
| Part number | AONS38108 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 425.09 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AONS38108-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Extremely Low RDS(ON) • Optimized switching performance (low RDS(ON)*Qg) • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 25V 355A < 1mΩ < 1.25mΩ Applications • Server and Telecom • OringFET 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS38108 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Maximum 25 ±16 355 225 395 56 44 78 304 192 77 4.8 3 -55 to 150 Typ Max 21 26 45 56 0.5 0.65 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.0: February 2023 www.aosmd.com Page 1 of 6 AONS38108 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 25 IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.8 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Inpu
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