Datasheet Details
| Part number | AONS38203 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 415.41 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AONS38203-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AONS38203 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 415.41 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet | AONS38203-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High current capability • RoHS 2.0 and Halogen-Free Compliant Applications • Oring-FET AONS38203 25V N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 25V 311A < 0.58mΩ < 0.9mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS38203 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VDS VGS ID IDM IDSM IAS EAS PD PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Maximum 25 ±16 311 311 928 85 69 80 320 208 83 6.2 4 -55 to 150 Typ Max 15 20 40 50 0.45 0.6 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.0: February 2022 www.aosmd.com Page 1 of 6 AONS38203 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=25V, VGS=0V Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±16V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfe
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