Datasheet Details
| Part number | AONT32136C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 315.10 KB |
| Description | 20V N-Channel MOSFET |
| Download | AONT32136C Download (PDF) |
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Overview: General.
| Part number | AONT32136C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 315.10 KB |
| Description | 20V N-Channel MOSFET |
| Download | AONT32136C Download (PDF) |
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switch AONT32136C 20V N-Channel MOSFET Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) ESD protection 20V 8A < 22mΩ < 26mΩ Top View DFN 2x2B Bottom View D D S D S Pin 1 D D G D G S Orderable Part Number AONT32136C Package Type DFN 2x2B Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 8 7.3 32 2.7 1.7 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 37 66 Max 45 80 Units °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 5 AONT32136C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=8A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=2.5V, ID=8A VDS=5V, ID=8A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recove
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