Datasheet Details
| Part number | AONZ66412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 586.75 KB |
| Description | 40V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
 AONZ66412 Datasheet
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| Part number | AONZ66412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 586.75 KB |
| Description | 40V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
AONZ66412 Datasheet
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• Bottom source technology • Very Low RDS(ON) at Vgs 4.5V • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • DC/DC Buck Boost Converters • POL Synchronous Dual Top View DFN 5x6F Bottom View Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 40V 40V 182A 182A < 2.4mΩ < 2.4mΩ < 3.8mΩ < 3.8mΩ 100% UIS Tested 100% Rg Tested Top View Bottom View Orderable Part Number AONZ66412 Package Type DFN 5x6F Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 40 40 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TC=25°C TC=100°C ID 182 115 182 115 Pulsed Drain Current C IDM 380 380 Continuous Drain Current TA=25°C TA=70°C IDSM 32 26 32 26 Avalanche Current C IAS 45 45 Avalanche energy L=0.1mH C EAS 101 101 TC=25°C Power Dissipation B TC=100°C PD 147 58 147 58 TA=25°C Power Dissipation A TA=70°C PDSM 5 3.2 5 3.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 20 40 0.65 Typ Q2 20 40 0.65 Max Q1 Max Q2 25 25 50 50 0.85 0.85 Units °C/W °C/W °C/W Rev.1.0: July 2023 www.aosmd.com Page 1 of 10 AONZ66412 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A
AONZ66412 40V Dual Asymmetric N-Channel AlphaSGT TM General.
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