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AOT11S65L Datasheet 650v 11a Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT11S65L/AOB11S65L/AOTF11S65L/AOTF11S65 650V 11A a MOS TM Power Transistor.

General Description

Product Summary The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 750V 45A 0.399W 13.2nC 2.9mJ Top View TO-220 TO-220F TO-263 D2PAK D D D AOT11S65L S D G AOTF11S65(L) S D G G S S G AOB11S65L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11S65L/AOB11S65L AOTF11S65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 11 11* 8 8* Pulsed Drain Current C IDM 45 Avalanche Current C IAR 2 Repetitive avalanche energy C EAR 60 Single pulsed avalanche energy G EAS 120 TC=25°C Power Dissipation B Derate above 25oC PD 198 39 1.6 0.31 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT11S65L/AOB11S65L 65 0.5 AOTF11S65 65 -- Maximum Junction-to-Case RqJC 0.63 3.25 * Drain current limited by maximum junction temperature.

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