Datasheet Details
| Part number | AOT2502L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 334.21 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOT2502L-AlphaOmegaSemiconductors.pdf |
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Overview: AOT2502L/AOB2502L 150V N-Channel MOSFET General.
| Part number | AOT2502L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 334.21 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOT2502L-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 150V 106A < 11mΩ (10.7mΩ*) Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-220 Bottom View D D G DS AOT2502L S DG Orderable Part Number AOT2502L AOB2502L Package Type TO-220 TO-263 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC * Surface mount package TO-263 TO-263 D2PAK Top View Bottom View D D D S G AOB2502L Form Tube Tape & Reel G G S S Minimum Order Quantity 1000 800 Maximum 150 ±20 106 67 250 18.5 14.5 40 240 180 277 111 8.3 5.3 -55 to 150 Units V V A A A mJ V W W °C Typ Max 12 15 50 60 0.35 0.45 Units °C/W °C/W °C/W Rev.1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance ID=250µA, VGS=0V 150 VDS=150V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA 3.5 VGS=10V, ID=20A TO-220 TJ=125°C VGS=10V, ID=20A
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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