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AOTF2610L - N-Channel MOSFET

Download the AOTF2610L datasheet PDF (AOT2610L included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

The AOT2610L & AOTF2610L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.

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Note: The manufacturer provides a single datasheet file (AOT2610L-AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary The AOT2610L & AOTF2610L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 60V 55A / 35A < 10.7mΩ < 13.
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