Datasheet Details
| Part number | AOTF262L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.42 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOTF262L Download (PDF) |
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| Part number | AOTF262L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.42 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOTF262L Download (PDF) |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-220F Bottom View 60V 85A < 3.6mΩ < 4.1mΩ D G DS S DG Orderable Part Number AOTF262L Package Type TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 10µs VSPIKE Peak diode recovery dv/dt dv/dt Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C PD PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 12 48 Maximum Junction-to-Case Steady-State RθJC 2.5 G Form Tube S Minimum Order Quantity 1000 Maximum 60 ±20 85 60 340 17.5 13.5 115 661 72 8 50 25 2.1 1.3 -55 to 175 Units V V A A A mJ V V/ns W W °C Max 15 60 3 Units °C/W °C/W °C/W Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.2 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Con
AOTF262L 60V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF262L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOTF2606L | 60V N-Channel MOSFET |
| AOTF260L | 60V N-Channel MOSFET |
| AOTF2610L | N-Channel MOSFET |
| AOTF2618L | 60V N-Channel MOSFET |
| AOTF266L | 60V N-Channel MOSFET |
| AOTF20C60 | N-Channel MOSFET |
| AOTF20N40 | 20A N-Channel MOSFET |
| AOTF20N40L | 20A N-Channel MOSFET |
| AOTF20N60 | 20A N-Channel MOSFET |
| AOTF20S60 | Power Transistor |