Datasheet Details
| Part number | AOUS66416 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 444.55 KB |
| Description | N-Channel MOSFET |
| Download | AOUS66416 Download (PDF) |
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| Part number | AOUS66416 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 444.55 KB |
| Description | N-Channel MOSFET |
| Download | AOUS66416 Download (PDF) |
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|
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent QG x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • High frequency switching and synchronous rectification • Synchronous rectification MOSFET for Server Power, ATX Power, Adaptor, Telecom power 100% UIS Tested 100% Rg Tested UltraSO-8TM Top View Bottom View D D 40V 69A < 3.3mΩ < 5.0mΩ G S S G G S Orderable Part Number AOUS66416 Package Type Ultra SO8 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH Power Dissipation B TC=25°C TC=100°C C VGS ID IDM IDSM IAS EAS PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 69 69 240 33 26.5 30 135 73.5 29.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 1.35 Max 20 50 1.7 Units °C/W °C/W °C/W Rev.1.0: April 2019 www.aosmd.com Page 1 of 6 AOUS66416 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Curr
AOUS66416 40V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AOUS66616 | 60V N-Channel MOSFET |
| AOUS66620 | 60V N-Channel MOSFET |
| AOUS66923 | 100V N-Channel MOSFET |
| AOU1N60 | 1.3A N-Channel MOSFET |
| AOU2N60 | 2A N-Channel MOSFET |
| AOU2N60A | 2A N-Channel MOSFET |
| AOU3N50 | 500V 3A N-Channel MOSFET |
| AOU3N60 | N-Channel MOSFET |
| AOU400 | N-Channel MOSFET |
| AOU401 | P-Channel MOSFET |