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AOU401 - P-Channel MOSFET

General Description

The AOU401 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOU401 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = -60V ID = -26 A (VGS = -10V) RDS(ON) < 40 mΩ (VGS = -10V) @ 20A RDS(ON) < 55 mΩ (VGS = -4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum -60 ±20 -26 -18 -60 -26 134 60 30 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy.

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www.DataSheet4U.com AOU401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU401 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU401 is Pb-free (meets ROHS & Sony 259 specifications). AOU401L is a Green Product ordering option. AOU401 and AOU401L are electrically identical. TO-251 D Features VDS (V) = -60V ID = -26 A (VGS = -10V) RDS(ON) < 40 mΩ (VGS = -10V) @ 20A RDS(ON) < 55 mΩ (VGS = -4.