Datasheet4U Logo Datasheet4U.com

AOU405 - P-Channel MOSFET

Datasheet Summary

Description

The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications.

Features

  • VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A.

📥 Download Datasheet

Datasheet preview – AOU405

Datasheet Details

Part number AOU405
Manufacturer Alpha & Omega Semiconductors
File Size 140.50 KB
Description P-Channel MOSFET
Datasheet download datasheet AOU405 Datasheet
Additional preview pages of the AOU405 datasheet.
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com AOU405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications. Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications). AOU405L is a Green Product ordering option. AOU405 and AOU405L are electrically identical. TO-251 D Top View Drain Connected to Tab G S G D S Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.
Published: |