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AOU404 - N-Channel MOSFET

General Description

The AOU404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOU404 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 mΩ (VGS = 20V) @ 5A RDS(ON) < 140 mΩ (VGS = 10V) RDS(ON) < 165 mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 75 ±25 10 10 20 10 15 20 10 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipati.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com AOU404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU404 is Pb-free (meets ROHS & Sony 259 specifications). AOU404L is a Green Product ordering option. AOU404 and AOU404L are electrically identical. TO-251 D Top View Drain Connected to Tab G S G D S Features VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 mΩ (VGS = 20V) @ 5A RDS(ON) < 140 mΩ (VGS = 10V) RDS(ON) < 165 mΩ (VGS = 4.