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AOU403 - P-Channel MOSFET

Datasheet Summary

Description

The AOU403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOU403 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mΩ (VGS = -10V) RDS(ON) < 150mΩ (VGS = -4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum -60 ±20 -12 -10 -30 -12 23 50 25 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.

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Datasheet preview – AOU403

Datasheet Details

Part number AOU403
Manufacturer Alpha & Omega Semiconductors
File Size 103.30 KB
Description P-Channel MOSFET
Datasheet download datasheet AOU403 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOU403 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU403 is Pb-free (meets ROHS & Sony 259 specifications). AOU403L is a Green Product ordering option. AOU403 and AOU403L are electrically identical. TO-251 D Features VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mΩ (VGS = -10V) RDS(ON) < 150mΩ (VGS = -4.
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