AOU400 Datasheet PDF - Alpha & Omega Semiconductors N-Channel MOSFET Specs

AOU400 - N-Channel MOSFET

Datasheet Summary

Description

The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications).

Features

VDS (V) = 60V ID = 38A (VGS = 10V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-t.

Datasheet Details

Part number	AOU400
Manufacturer	Alpha & Omega Semiconductors
File Size	100.75 KB
Description	N-Channel MOSFET
Datasheet	AOU400 Datasheet
Additional preview pages of the AOU400 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com AOU400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product ordering option. AOU400 and AOU400L are electrically identical. Features VDS (V) = 60V ID = 38A (VGS = 10V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.

Published: Mar 23, 2009 |