Datasheet Details
| Part number | AOUS66616 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 376.17 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOUS66616 Download (PDF) |
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| Part number | AOUS66616 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 376.17 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOUS66616 Download (PDF) |
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|
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 92A < 3.3mΩ < 4.7mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested UltraSO-8TM D Top View Bottom View D G S S G G S Orderable Part Number AOUS66616 Package Type Ultra SO8 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 92 80 330 33 26 35 184 92.5 37 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.1 Max 20 50 1.35 Units °C/W °C/W °C/W Rev.2.0: April 2019 www.aosmd.com Page 1 of 6 AOUS66616 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Conti
AOUS66616 60V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AOUS66620 | 60V N-Channel MOSFET |
| AOUS66416 | N-Channel MOSFET |
| AOUS66923 | 100V N-Channel MOSFET |
| AOU1N60 | 1.3A N-Channel MOSFET |
| AOU2N60 | 2A N-Channel MOSFET |
| AOU2N60A | 2A N-Channel MOSFET |
| AOU3N50 | 500V 3A N-Channel MOSFET |
| AOU3N60 | N-Channel MOSFET |
| AOU400 | N-Channel MOSFET |
| AOU401 | P-Channel MOSFET |