Datasheet Details
| Part number | AOY2610E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 411.34 KB |
| Description | 60V N-Channel MOSFET |
| Download |
AOY2610E Download (PDF)
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| Part number | AOY2610E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 411.34 KB |
| Description | 60V N-Channel MOSFET |
| Download |
AOY2610E Download (PDF)
|
|
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Compliant Applications • High efficiency power supply • Secondary synchronus rectifier Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 46A < 9.5mΩ < 13.3mΩ HBM Class 2 TO-252 TO-251A TO251B DPAK IPAK D Top View Bottom View Top View Bottom View Top View Bottom View D D S G G S AOD2610E Orderable Part Number AOD2610E AOI2610E AOY2610E D S D G G D S AOI2610E Package Type TO-252 TO-251A TO-251B S GD AOY2610E Form Tape & Reel Tube Tube D G G SD S Minimum Order Quantity 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 46 36.5 110 19 15 17 43 72 59.5 23.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.7 Max 20 50 2.1 Units °C/W °C/W °C/W Rev.2.0: November 2016 www.aosmd.com Page 1 of 6 AOD2610E/AOI2619E/AOY2610E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold V
AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOY2610E | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOY2N60 | N-Channel MOSFET |
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| AOY516 | 30V N-Channel MOSFET |
| AOY66620 | 60V N-Channel MOSFET |
| AOY66919 | 100V N-Channel MOSFET |
| AOY66920 | 100V N-Channel AlphaSGT |
| AOY66923 | 100V N-Channel MOSFET |