Datasheet Details
| Part number | AOY66919 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 353.59 KB |
| Description | 100V N-Channel MOSFET |
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AOY66919 Download (PDF)
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| Part number | AOY66919 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 353.59 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOY66919 Download (PDF)
|
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Qg x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 70A < 6.5mΩ < 8.5mΩ TO251B (IPAK short lead) D Top View Bottom View D S D G G D S Orderable Part Number AOY66919 Package Type TO-251B G Form Tube S Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 70 70 220 22 17 48 115 156 62 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 20 50 0.8 Units °C/W °C/W °C/W Rev 1.2: March 2024 www.aosmd.com Page 1 of 6 AOY66919 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PAR
AOY66919 100V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AOY66920 | 100V N-Channel AlphaSGT |
| AOY66923 | 100V N-Channel MOSFET |
| AOY66620 | 60V N-Channel MOSFET |
| AOY2610E | 60V N-Channel MOSFET |
| AOY2N60 | N-Channel MOSFET |
| AOY423 | P-Channel MOSFET |
| AOY514 | 30V N-Channel MOSFET |
| AOY516 | 30V N-Channel MOSFET |