Datasheet Details
| Part number | AOY66620 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 349.13 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 AOY66620 Datasheet
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| Part number | AOY66620 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 349.13 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
AOY66620 Datasheet
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• Trench Power MOSFET technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 58A < 8.5mΩ < 11mΩ Applications • Synchronous Rectification in SMPS • ATX and Gaming Power Supplies • Switching Applications 100% UIS Tested 100% Rg Tested TO251B (IPAK short lead) D Top View Bottom View D S D G Orderable Part Number AOY66620 G D S Package Type TO-251B G Form Tube S Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 58 37 125 20 16 20 60 52 21 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.9 Max 20 50 2.4 Units °C/W °C/W °C/W Rev 1.2: March 2024 www.aosmd.com Page 1 of 6 AOY66620 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PAR
AOY66620 60V N-Channel AlphaSGT TM General.
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