Datasheet Details
| Part number | AOY66923 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 593.69 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOY66923 Datasheet
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| Part number | AOY66923 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 593.69 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOY66923 Datasheet
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 58A < 11mΩ < 15mΩ TO-251B (IPAK short lead) D Top View Bottom View D S D G G D S Orderable Part Number AOY66923 Package Type TO-251B G Form Tube S Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VDS VGS ID IDM IDSM IAS EAS PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 58 36.5 130 16.5 13.5 30 45 73 29 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 1.35 Max 20 50 1.7 Units °C/W °C/W °C/W Rev.2.1: February 2022 www.aosmd.com Page 1 of 6 AOY66923 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETER
AOY66923 100V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AOY66920 | 100V N-Channel AlphaSGT |
| AOY66919 | 100V N-Channel MOSFET |
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| AOY2610E | 60V N-Channel MOSFET |
| AOY2N60 | N-Channel MOSFET |
| AOY423 | P-Channel MOSFET |
| AOY514 | 30V N-Channel MOSFET |
| AOY516 | 30V N-Channel MOSFET |