AO4610 Datasheet | Alpha & Omega Semiconductors

AO4610 plementary Enhancement Mode Field Effect Transistor General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical. Features n-channel VDS (V) = 30V ID = 8.5A(VGS=10V) RDS(ON) < 18mΩ (VGS=10V) < 28mΩ (VGS=4.5V) VF<0.5V@1A p-channel -30V -7.1A(VGS = -10V) RDS(ON) < 25mΩ (VGS = -10V) < 40mΩ (VGS =...