Datasheet Summary
60V plementary Enhancement Mode Field Effect Transistor
General Description
The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V)
RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V)
RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V)
100% Rg tested
SOIC-8 Top View
Bottom View
D2 D1
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
G2
S2
G1 S1
SOIC-8 n-channel...
