AO4615 Datasheet | Alpha & Omega Semiconductors

Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-free (meets ROHS & Sony 259 specifications). AO4615L is a Green Product ordering option. AO4615 and AO4615L are electrically identical Features n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel MOSFET has an additional ROC < 1MΩ for open circuit protection. D2 S2 G2 S1 G1 .. D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 ROC S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain A Current Pulsed Drain Current Power Dissipation Avalanche Current B Max p-channel -30 ±20 -5.7 -4.9 -30 2 1.44 20 20 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C 7.2 ID IDM PD IAR EAR TJ, TSTG 6.1 30 2 1.44 15 11 -55 to 150 W A m J °C Repetitive avalanche energy 0.1m H Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Typ n-ch n-ch n-ch p-ch p-ch p-ch Max 55 92 37 48 87 37 Units 62.5 °C/W 110 °C/W 50 °C/W 62.5 °C/W 110 °C/W 50 °C/W Alpha & Omega Semiconductor, Ltd. N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=10V, I D=7.2A RDS(ON)...