Datasheet Details
| Part number | AON6410 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 158.26 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6410-AlphaOmegaSemiconductors.pdf |
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Overview: AON6410 30V N-Channel MOSFET General.
| Part number | AON6410 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 158.26 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6410-AlphaOmegaSemiconductors.pdf |
|
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The AON6410 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
Product Summary VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current BJ TC=25°C TC=100°C ID Pulsed Drain Current IDM Continuous Drain TA=25°C Current H TA=70°C Avalanche Current C Repetitive avalanche energy L=0.3mH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 24 19 120 10 8 30 135 35 14 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 2.6 Max 30 64 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
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