Datasheet Details
| Part number | AONS32310 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 323.77 KB |
| Description | N-Channel MOSFET |
| Datasheet | AONS32310-AlphaOmegaSemiconductors.pdf |
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Overview: AONS32310 30V N-Channel MOSFET General.
| Part number | AONS32310 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 323.77 KB |
| Description | N-Channel MOSFET |
| Datasheet | AONS32310-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 400A < 1.05mΩ < 1.43mΩ Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View Top View D PIN1 S S S G PIN1 1 2 3 4 8D 7D 6D 5 DG S Orderable Part Number AONS32310 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C G Current TC=100°C Pulsed Drain Current C (≤10μS) Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 400 305 1500 60 50 80 320 400 160 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.26 Max 20 50 0.31 Units °C/W °C/W °C/W Rev.4.0: May 2019 .aosmd.
Page 1 of 6 AONS32310 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS
| Part Number | Description |
|---|---|
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