Datasheet Details
| Part number | AONS32311 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 331.74 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS32311-AlphaOmegaSemiconductors.pdf |
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Overview: AONS32311 30V N-Channel MOSFET General.
| Part number | AONS32311 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 331.74 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS32311-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 220A < 1.35mΩ < 1.9mΩ Applications • Motor, Oring, Efuse • High current battery charge/discharge 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS32311 S1 S2 S3 PIN1 G 4 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C (≤10μs) IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 220 140 880 56 45 70 245 119 48 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.85 Max 20 50 1.05 Units °C/W °C/W °C/W Rev.1.0: January 2019 .aosmd.
Page 1 of 6 AONS32311 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAM
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