Datasheet Details
| Part number | AONS32314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 384.72 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS32314-AlphaOmegaSemiconductors.pdf |
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Overview: AONS32314 30V N-Channel MOSFET General.
| Part number | AONS32314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 384.72 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS32314-AlphaOmegaSemiconductors.pdf |
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• Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 32A < 8.7mΩ < 12.3mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS32314 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 26 90 18.5 15 33 27 25 10 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 4.0 Max 25 55 5.0 Units °C/W °C/W °C/W Rev.1.0: July 2017 .aosmd.
Page 1 of 6 AONS32314 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance VGS=4.5V, ID=20A VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss
| Part Number | Description |
|---|---|
| AONS32310 | N-Channel MOSFET |
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| AONS32302 | 30V N-Channel MOSFET |
| AONS32303 | 30V N-Channel MOSFET |
| AONS32304 | 30V N-Channel MOSFET |
| AONS32306 | N-Channel MOSFET |
| AONS32100 | 25V N-Channel MOSFET |
| AONS32106 | 20V N-Channel MOSFET |
| AONS30300 | 30V N-Channel MOSFET |
| AONS30302 | 30V N-Channel Transistor |